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STRUCTURAL MOLECULAR IMAGING LIGHT ENHANCED SPECTROSCOPIES

Plasmonic assisted hot electron spectroscopy maps

Plasmonic assisted hot electron spectroscopy maps

Details

Plasmonic assisted hot electron spectroscopy offers an extremely sensible technique to the investigation of local electronic properties of a bulk or nano structured semiconductor. Naturally combined with the atomic force microscopy, it maintains ultimate spatial resolution and reveals complementary details of the sample related to the conduction bands structure. Here, exploiting high efficiency photon to hot charge conversion at 633 and 785 nm at the apex of a gold tapered guide, aside an efficient charge injection in non-biased tip-to sample configuration, we demonstrate an ultimate lateral resolution of few nanometers in various patterned GaAs samples of different doping level. Data analysis in the point contact framework clarify the role of the device in the observed shielding potential confinement, and how this technique overcomes the Fowler model limit in the characterization at the nanoscopy level.